| PART |
Description |
Maker |
| M58LW064 M58LW064A M58LW064A150NF1T M58LW064A150NF |
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
ST Microelectronics
SGS Thomson Microelectronics
|
| LH28F160BVHE-BTL90 |
16M-BIT(2Mbit x8/1Mbit x16)Boot Block Flash MEMORY(16M2M位x8/1Mx16)Boot Block 闪速存储器)
|
Sharp Corporation
|
| LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器)
Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation
Sharp Electrionic Components
|
| M27W102-100B6TR M27W102-100F6TR M27W102-100K6TR M2 |
Hex Drivers 14-SO 0 to 70 1兆位64Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
Hex Drivers 14-PDIP 0 to 70
Hex Drivers 14-SOIC 0 to 70
PARTITION ISO FOR TERMINAL BLOCK
TEST PLUG FOR TERMINAL BLOCK
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product
CANMS3470L16-23PL/C 16兆x16插槽，开机区块快闪记忆体Mbit的SRAM56Kb x16，内存产品多
|
意法半导
STMicroelectronics N.V.
|
| LRS1387 |
64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM
|
SHARP
|
| M5M29GB320VP-80 |
CMOS Block Erase Flash Memory
|
Renesas
|
| M59BW102 |
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
|
http://
|
| M36W432TG70ZA1T M36W432TG85ZA6T M36W432TG-ZAT M36W |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
意法半导
|
| M5M29GB |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
